Littelfuse, Inc. Mosfet, N-Ch, 1.2Kv, 3A, To-263Aa; Channel Type Littelfuse IXTA3N120-TRL

The IXTA3N120 is an N-channel enhancement mode MOSFET designed for high voltage applications, rated for 1200 V drain-source breakdown voltage and 3 A continuous drain current. It features a fast intrinsic diode and is avalanche rated. Packaged in the TO-263AA (D2PAK) surface mount style, it measures 8.64 to 9.65 mm in length, 9.65 to 10.41 mm in width, and 1.6 mm from case to lead solder point. The device has a maximum on-resistance of 4.5 Ω at 10 V gate-source voltage and 0.5 A drain current, with a thermal resistance from junction to case of 0.62 °C/W. Operating junction temperature ranges from -55 °C to 150 °C. The molding epoxies meet UL 94 V-0 flammability standards.