Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA130N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Datasheet
Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Datasheet

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTA130N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTA130N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA130N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 130A, To-263; Channel Type Littelfuse - 03AH1288 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 130A, To-263; Channel Type Littelfuse
03AH1288
Mosfet, N-Ch, 100V, 130A, To-263; Channel Type Littelfuse 03AH1288
MOSFET, N-CH, 100V, 130A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 130A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA130N10T 03AH1288
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 100V, 130A, To-263; Channel Type Littelfuse
Polarity N-Channel
Unlock Full Specs
to access all available technical data