Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
MOSFET, N-CH, 100V, 130A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTA130N10T | 03AH1288 |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 100V, 130A, To-263; Channel Type Littelfuse |
| Polarity | N-Channel |