Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N30P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH52N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 52 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features a low RDS(on) of 73 mΩ, an avalanche energy rating of 1 J, and a fast intrinsic diode with reverse recovery time of 200 ns. The device meets avalanche and low inductance design goals, with a maximum junction temperature of 150°C and thermal resistance from junction to case of 0.31 °C/W. It is avalanche-rated and has a high dv/dt capability of 10 V/ns.

Datasheet Summary
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The IXFH52N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 52 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features a low RDS(on) of 73 mΩ, an avalanche energy rating of 1 J, and a fast intrinsic diode with reverse recovery time of 200 ns. The device meets avalanche and low inductance design goals, with a maximum junction temperature of 150°C and thermal resistance from junction to case of 0.31 °C/W. It is avalanche-rated and has a high dv/dt capability of 10 V/ns.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH52N30P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N30P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 52A 300V 0.066ohm MOSFET Transistor
278-IXFH52N30P
N-Channel 52A 300V 0.066ohm MOSFET Transistor 278-IXFH52N30P
Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH52N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 300V, 0.066ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 300V, 0.066ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH52N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH52N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 300V, 0.066ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 300V, 0.066ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH52N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant Ixys Semiconductor - 71AH4548 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant Ixys Semiconductor
71AH4548
Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant Ixys Semiconductor 71AH4548
MOSFET, N-CH, 300V, 52A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 300V, 52A, TO-247 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH52N30P 278-IXFH52N30P 71AH4548
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 52A 300V 0.066ohm MOSFET Transistor Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant Ixys Semiconductor
Polarity N-Channel
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