Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFN400N15X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFN400N15X3 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC (SOT-227) case, weighs 30 g, and features an aluminum nitride isolation substrate with a 2500 V~ isolation voltage. The device has a drain-source voltage rating of 150 V, a continuous drain current of 400 A at 25°C case temperature, and a maximum on-resistance of 2.5 mΩ at 10 V gate-source voltage and 200 A drain current. It is avalanche rated with an energy rating of 3.5 J and has a thermal resistance from junction to case of 0.18 °C/W. The part meets international standard packaging and is rated for operation from -55 °C to 150 °C junction temperature.

Datasheet Summary
Powered by GS/AI

The IXFN400N15X3 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a miniBLOC (SOT-227) case, weighs 30 g, and features an aluminum nitride isolation substrate with a 2500 V~ isolation voltage. The device has a drain-source voltage rating of 150 V, a continuous drain current of 400 A at 25°C case temperature, and a maximum on-resistance of 2.5 mΩ at 10 V gate-source voltage and 200 A drain current. It is avalanche rated with an energy rating of 3.5 J and has a thermal resistance from junction to case of 0.18 °C/W. The part meets international standard packaging and is rated for operation from -55 °C to 150 °C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFN400N15X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFN400N15X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFN400N15X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, Module, N-Ch, 150V, 400A; Channel Type Littelfuse - 03AH0754 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Module, N-Ch, 150V, 400A; Channel Type Littelfuse
03AH0754
Mosfet, Module, N-Ch, 150V, 400A; Channel Type Littelfuse 03AH0754
MOSFET, MODULE, N-CH, 150V, 400A; Channel Type:N Channel; Continuous Drain Current Id:400A; Drain Source Voltage Vds:150V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:695W RoHS Compliant: Yes

MOSFET, MODULE, N-CH, 150V, 400A; Channel Type:N Channel; Continuous Drain Current Id:400A; Drain Source Voltage Vds:150V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:695W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN400N15X3 03AH0754
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, Module, N-Ch, 150V, 400A; Channel Type Littelfuse
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

CSD17483F4 30V, N-Channel FemtoFET?MOSFET - CSD17483F4 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 5000 milliamps
View Details
7 suppliers
N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 - BUK7Y2R5-40HX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 120000 milliamps
View Details
6 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2907Z - 1046434-AUIRF2907Z - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 300000 milliwatts
View Details
5 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810026SCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
4 suppliers