- Trained on our vast library of engineering resources.

Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH120N30X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH120N30X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH120N30X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH120N30X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 120A, 150Deg C, 735W; Channel Type Littelfuse - 03AH0522 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 120A, 150Deg C, 735W; Channel Type Littelfuse
03AH0522
Mosfet, N-Ch, 300V, 120A, 150Deg C, 735W; Channel Type Littelfuse 03AH0522
MOSFET, N-CH, 300V, 120A, 150DEG C, 735W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 120A, 150DEG C, 735W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, 120A, 300V, 735W, To-247 Rohs Compliant Littelfuse - 29AK0422 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 120A, 300V, 735W, To-247 Rohs Compliant Littelfuse
29AK0422
Mosfet, 120A, 300V, 735W, To-247 Rohs Compliant Littelfuse 29AK0422
MOSFET, 120A, 300V, 735W, TO-247 ROHS COMPLIANT: YES

MOSFET, 120A, 300V, 735W, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH120N30X3 03AH0522 29AK0422
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 300V, 120A, 150Deg C, 735W; Channel Type Littelfuse Mosfet, 120A, 300V, 735W, To-247 Rohs Compliant Littelfuse
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 120000 milliamps 120000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH18N60X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 18000 milliamps
View Details
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs - IXFH60N60X2A - Littelfuse, Inc.
Specs
V(BR)DSS 600 volts
IDSS 60000 milliamps
rDS(on) 0.0520 ohms
View Details
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK44N60 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 44000 milliamps
View Details
2 suppliers
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFM6N100 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 6000 milliamps
View Details