Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 IXTP150N15X4

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

MOSFET, N-CH, 150V, 150A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes