Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 IXTP150N15X4

Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
  • Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 - IXTP150N15X4 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 150V, 150A, To-220; Channel Type Littelfuse - 03AH1646 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXTP150N15X4 is an N-channel enhancement mode MOSFET for high-efficiency switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-220 case with a drain tab, weighing 3 g. The device has a maximum drain-source voltage of 150 V, continuous drain current of 150 A at 25°C case temperature, and a maximum on-state resistance of 7.2 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 1 J and can withstand a transient gate-source voltage of ±30 V. Thermal resistance from junction to case is 0.31 °C/W, and it operates over a junction temperature range of -55 °C to +175 °C. The part is mounted with a torque of 1.13 N·m and meets RoHS standards.

Datasheet Summary
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The IXTP150N15X4 is an N-channel enhancement mode MOSFET for high-efficiency switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-220 case with a drain tab, weighing 3 g. The device has a maximum drain-source voltage of 150 V, continuous drain current of 150 A at 25°C case temperature, and a maximum on-state resistance of 7.2 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 1 J and can withstand a transient gate-source voltage of ±30 V. Thermal resistance from junction to case is 0.31 °C/W, and it operates over a junction temperature range of -55 °C to +175 °C. The part is mounted with a torque of 1.13 N·m and meets RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 - IXTP150N15X4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4
IXTP150N15X4
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 IXTP150N15X4
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 150V, 150A, To-220; Channel Type Littelfuse - 03AH1646 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 150V, 150A, To-220; Channel Type Littelfuse
03AH1646
Mosfet, N-Ch, 150V, 150A, To-220; Channel Type Littelfuse 03AH1646
MOSFET, N-CH, 150V, 150A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 150V, 150A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP150N15X4 03AH1646
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTP150N15X4 Mosfet, N-Ch, 150V, 150A, To-220; Channel Type Littelfuse
Polarity N-Channel
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