The IXFH15N100Q3 is an N-channel enhancement mode Power MOSFET with a 1000 V drain-to-source voltage rating and a continuous drain current of 15 A at 25°C, housed in a TO-247 package weighing 6.0 g. It features a maximum on-state resistance of 1.05 Ω at 10 V gate drive and a fast intrinsic rectifier with a reverse recovery time of 250 ns and peak reverse recovery current of 7.6 A. The device is avalanche rated with 1.0 J energy capability and supports a maximum drain-source dv/dt of 50 V/ns. It operates over a junction temperature range of -55°C to 150°C and meets RoHS standards. The TO-247 package provides low package inductance and low intrinsic gate resistance for efficient switching in DC-DC converters, battery chargers, and switch-mode power supplies.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
Power Field-Effect Transistor, Product overview: IXFH15N100Q3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH15N100Q3 can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 1000V, 1.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 1KV, 15A, TO-247 ROHS COMPLIANT: YES
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH15N100Q3 | 278-IXFH15N100Q3 | 151840770 | 71AH4542 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFET Transistor | Transistor | Mosfet, N-Ch, 1Kv, 15A, To-247 Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel |
