The IXFN39N90 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and resonant-mode power supplies. It is packaged in a miniBLOC (SOT-227) with a mass of 30 g and features aluminium nitride isolation. It has a drain-source voltage rating of 900 V, a continuous drain current of 39 A at 25°C, and a maximum drain-source on-resistance of 220 mΩ. The device is avalanche rated, has a fast intrinsic diode, and low package inductance. Thermal resistance from junction to case is 0.18 °C/W. It meets the miniBLOC mechanical mounting requirement of 1.5/13 Nm/lb.in. and is rated for operating and storage temperatures from -55°C to 150°C.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET Transistor, N Channel, 39 A, 900 V, 220 mohm RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN39N90 | 14J1689 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFN39N90 | Mosfet Transistor, N Channel, 39 A, 900 V, 220 Mohm Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
