Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFP56N30X3M

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
  • 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFP56N30X3M - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 300V, 56A, To-220; Channel Type Littelfuse - 03AH0836 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXFP56N30X3M is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It features an overmolded TO-220 package with an electrically isolated tab, weighing 2.5 g. The device has a drain-source breakdown voltage of 300 V, continuous drain current of 56 A at 25°C, and a maximum on-resistance of 27 mΩ at 10 V gate voltage. It is rated for avalanche energy of 700 mJ and supports a peak pulsed drain current of 112 A. Thermal resistance from junction to case is 3.5 °C/W and from case to sink is 0.50 °C/W. The part is avalanche rated, has low package inductance, and offers 2500 V electrical isolation. It meets the AEC-Q200 standard for automotive applications and is compliant with RoHS. Operating junction temperature ranges from -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

The IXFP56N30X3M is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It features an overmolded TO-220 package with an electrically isolated tab, weighing 2.5 g. The device has a drain-source breakdown voltage of 300 V, continuous drain current of 56 A at 25°C, and a maximum on-resistance of 27 mΩ at 10 V gate voltage. It is rated for avalanche energy of 700 mJ and supports a peak pulsed drain current of 112 A. Thermal resistance from junction to case is 3.5 °C/W and from case to sink is 0.50 °C/W. The part is avalanche rated, has low package inductance, and offers 2500 V electrical isolation. It meets the AEC-Q200 standard for automotive applications and is compliant with RoHS. Operating junction temperature ranges from -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFP56N30X3M - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFP56N30X3M
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFP56N30X3M
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 56A, To-220; Channel Type Littelfuse - 03AH0836 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 56A, To-220; Channel Type Littelfuse
03AH0836
Mosfet, N-Ch, 300V, 56A, To-220; Channel Type Littelfuse 03AH0836
MOSFET, N-CH, 300V, 56A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 56A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP56N30X3M 03AH0836
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 300V, 56A, To-220; Channel Type Littelfuse
Polarity N-Channel
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