The IXFH16N120P is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as switch-mode and resonant-mode power supplies, pulse power, and DC-DC converters. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and a mountable weight of 6 g. The device has a drain-source breakdown voltage of 1200 V, a continuous drain current of 16 A at 25°C, and a maximum drain-source on-state resistance of 950 mΩ at 10 V gate voltage. It features an avalanche energy rating of 800 mJ, a gate-source voltage limit of ±30 V, and a fast intrinsic diode with reverse recovery time of 300 ns. The thermal resistance from junction to case is 0.21 °C/W. The part is avalanche rated, complies with RoHS standards, and is rated for operation from -55 °C to 150 °C junction temperature.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
16A N-Ch MOSFET, 1200V, 0.95Ω, TO-247AD Product overview: IXFH16N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 16A, 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 16A, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH16N120P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 16A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:6.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH16N120P | 278-IXFH16N120P | 03AH0536 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | 16A 1200V MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 16A, To-247; Channel Type Littelfuse |
| Polarity | N-Channel |
