Littelfuse, Inc. -100V to -600V P-Channel Power MOSFETs IXTH50P10

Description
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages
Description
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages
Datasheet
Datasheet Summary
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The IXTH50P10 is a P-channel enhancement mode MOSFET designed for high-side switching, DC choppers, and push-pull amplifiers. It is packaged in a TO-247 case, weighing 6 g, with a drain-source voltage rating of -100 V and a continuous drain current of -50 A at 25°C. The maximum on-state resistance is 55 mΩ at V_GS = -10 V and I_D = -25 A. The device is avalanche rated with an energy rating of 30 mJ and has a thermal resistance from junction to case of 0.42 °C/W. It features a rugged polysilicon gate cell structure, low package inductance under 5 nH, and is rated for junction temperatures from -55°C to 150°C. The part meets the HDMOSTM process standard and is qualified for unclamped inductive switching. The mounting torque for the TO-247 package is 1.13 Nm (10 lb.in.).

Datasheet Summary
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The IXTH50P10 is a P-channel enhancement mode MOSFET designed for high-side switching, DC choppers, and push-pull amplifiers. It is packaged in a TO-247 case, weighing 6 g, with a drain-source voltage rating of -100 V and a continuous drain current of -50 A at 25°C. The maximum on-state resistance is 55 mΩ at V_GS = -10 V and I_D = -25 A. The device is avalanche rated with an energy rating of 30 mJ and has a thermal resistance from junction to case of 0.42 °C/W. It features a rugged polysilicon gate cell structure, low package inductance under 5 nH, and is rated for junction temperatures from -55°C to 150°C. The part meets the HDMOSTM process standard and is qualified for unclamped inductive switching. The mounting torque for the TO-247 package is 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
-100V to -600V P-Channel Power MOSFETs - IXTH50P10 - Littelfuse, Inc.
Rosemont, IL, United States
-100V to -600V P-Channel Power MOSFETs
IXTH50P10
-100V to -600V P-Channel Power MOSFETs IXTH50P10
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages

P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Mosfet, P-Ch, 50A, 100V, To-247 Rohs Compliant Littelfuse - 29AK0474 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 50A, 100V, To-247 Rohs Compliant Littelfuse
29AK0474
Mosfet, P-Ch, 50A, 100V, To-247 Rohs Compliant Littelfuse 29AK0474
MOSFET, P-CH, 50A, 100V, TO-247 ROHS COMPLIANT: YES

MOSFET, P-CH, 50A, 100V, TO-247 ROHS COMPLIANT: YES

Supplier's Site
Mosfet, P-Ch, 100V, 50A, 150Deg C, 300W; Channel Type Littelfuse - 03AH1520 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 100V, 50A, 150Deg C, 300W; Channel Type Littelfuse
03AH1520
Mosfet, P-Ch, 100V, 50A, 150Deg C, 300W; Channel Type Littelfuse 03AH1520
MOSFET, P-CH, 100V, 50A, 150DEG C, 300W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, P-CH, 100V, 50A, 150DEG C, 300W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH50P10 29AK0474 03AH1520
Product Name -100V to -600V P-Channel Power MOSFETs Mosfet, P-Ch, 50A, 100V, To-247 Rohs Compliant Littelfuse Mosfet, P-Ch, 100V, 50A, 150Deg C, 300W; Channel Type Littelfuse
Polarity P-Channel
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