The IXFN44N60 is a single-die N-channel enhancement mode power MOSFET for high-power switching applications, packaged in a miniBLOC (SOT-227 B) measuring 31.5-31.88 mm × 7.8-8.2 mm × 38.0-38.23 mm. It has a 600 V drain-source breakdown voltage, 44 A continuous drain current, and a maximum on-resistance of 130 mΩ at 10 V gate drive. The device is avalanche rated with 60 mJ unclamped inductive switching energy and features a fast intrinsic diode with a reverse recovery time of 250 ns. Thermal resistance is 0.21 K/W from junction to case and 0.05 K/W from case to heat sink. Operating junction temperature ranges from -55°C to 150°C. It includes an aluminum nitride isolation substrate and low package inductance.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:44A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:600W; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN44N60 | 14J1691 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
