Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTT16N10D2 IXTT16N10D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTT16N10D2 is a normally-on N-channel depletion-mode MOSFET rated for 100 V drain-source voltage and 16 A continuous drain current, with a maximum on-state resistance of 64 mΩ at 25°C. It is packaged in a TO-268 case, weighs 4 g, and is designed for applications such as audio amplifiers, start-up circuits, protection circuits, and current regulators. The device meets UL 94 V-0 flammability standards for its molding epoxy, has a maximum junction temperature of 175°C, and a thermal resistance from junction to case of 0.18 °C/W. Its gate-source voltage rating is ±20 V continuous and ±30 V transient. The part is qualified as a power semiconductor for high-power-density applications requiring linear mode operation and an usable internal body diode.

Datasheet Summary
Powered by GS/AI

The IXTT16N10D2 is a normally-on N-channel depletion-mode MOSFET rated for 100 V drain-source voltage and 16 A continuous drain current, with a maximum on-state resistance of 64 mΩ at 25°C. It is packaged in a TO-268 case, weighs 4 g, and is designed for applications such as audio amplifiers, start-up circuits, protection circuits, and current regulators. The device meets UL 94 V-0 flammability standards for its molding epoxy, has a maximum junction temperature of 175°C, and a thermal resistance from junction to case of 0.18 °C/W. Its gate-source voltage rating is ±20 V continuous and ±30 V transient. The part is qualified as a power semiconductor for high-power-density applications requiring linear mode operation and an usable internal body diode.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTT16N10D2 - IXTT16N10D2 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTT16N10D2
IXTT16N10D2
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTT16N10D2 IXTT16N10D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 16A, 175Deg C, 830W; Channel Type Littelfuse - 03AH1821 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 16A, 175Deg C, 830W; Channel Type Littelfuse
03AH1821
Mosfet, N-Ch, 100V, 16A, 175Deg C, 830W; Channel Type Littelfuse 03AH1821
MOSFET, N-CH, 100V, 16A, 175DEG C, 830W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N-CH, 100V, 16A, 175DEG C, 830W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTT16N10D2 03AH1821
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTT16N10D2 Mosfet, N-Ch, 100V, 16A, 175Deg C, 830W; Channel Type Littelfuse
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1219939 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type SOT223; Sot-223
View Details
CSD23381F4 12V , P-Channel FemtoFET?MOSFET - CSD23381F4 - Texas Instruments
Specs
Polarity P-Channel
V(BR)DSS -12 volts
IDSS -9000 milliamps
View Details
7 suppliers
40V 75A TO220 MOSFET Transistor - 278-BUK7908-40AIE,127 - ERSAELECTRONICS PTE. LTD.
Specs
PD 221000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
5 suppliers