Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFA22N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFA22N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFA22N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFA22N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
MOSFET Transistor 278-IXFA22N65X2
Power Field-Effect Transistor, Product overview: IXFA22N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA22N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFA22N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA22N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 9171451P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171451P
MOSFETs 9171451P
N-ch X2 Series MOSFET 650V 22A TO-263AA

N-ch X2 Series MOSFET 650V 22A TO-263AA

Supplier's Site
MOSFETs - 9171451 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171451
MOSFETs 9171451
N-ch X2 Series MOSFET 650V 22A TO-263AA

N-ch X2 Series MOSFET 650V 22A TO-263AA

Supplier's Site
MOSFETs - 1684819 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684819
MOSFETs 1684819
N-ch X2 Series MOSFET 650V 22A TO-263AA

N-ch X2 Series MOSFET 650V 22A TO-263AA

Supplier's Site
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor - 02AC9795 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor
02AC9795
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor 02AC9795
MOSFET, N-CH, 650V, 22A, TO-263AA; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 22A, TO-263AA; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA22N65X2 278-IXFA22N65X2 9171451P 9171451 02AC9795
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor MOSFETs MOSFETs Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel
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