The IXFA22N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 22 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a weight of 2.5 g, featuring a maximum on-resistance of 145 mΩ at 25°C and an avalanche energy rating of 1 J. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.32 °C/W. It is avalanche rated, has low gate charge and package inductance, and meets international standard package requirements. The part is qualified to RoHS standards.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXFA22N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA22N65X2 can be used for catalog matching and distributor lookup.
N-ch X2 Series MOSFET 650V 22A TO-263AA
N-ch X2 Series MOSFET 650V 22A TO-263AA
N-ch X2 Series MOSFET 650V 22A TO-263AA
MOSFET, N-CH, 650V, 22A, TO-263AA; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFA22N65X2 | 278-IXFA22N65X2 | 9171451P | 9171451 | 02AC9795 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFET Transistor | MOSFETs | MOSFETs | Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
