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Littelfuse, Inc. 600V - 700V Power MOSFETs with HiPerFET™ Options IXFA22N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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Product
Description
Supplier Links
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFA22N65X2 - Littelfuse, Inc.
Chicago, IL, United States
600V - 700V Power MOSFETs with HiPerFET™ Options
IXFA22N65X2
600V - 700V Power MOSFETs with HiPerFET™ Options IXFA22N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet
 - 9171451P - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge). Fast intrinsic rectifier diode. Low intrinsic gate resistance. Low package inductance. Industry standard packages Channel Type = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 650 V Maximum Drain Source Resistance = 145 mOhms Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 2.7V Maximum Gate Source Voltage = -30 V, +30 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge). Fast intrinsic rectifier diode. Low intrinsic gate resistance. Low package inductance. Industry standard packages
Channel Type = N
Maximum Continuous Drain Current = 22 A
Maximum Drain Source Voltage = 650 V
Maximum Drain Source Resistance = 145 mOhms
Maximum Gate Threshold Voltage = 5V
Minimum Gate Threshold Voltage = 2.7V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9171451 - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge). Fast intrinsic rectifier diode. Low intrinsic gate resistance. Low package inductance. Industry standard packages Channel Type = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 650 V Maximum Drain Source Resistance = 145 mOhms Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 2.7V Maximum Gate Source Voltage = -30 V, +30 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge). Fast intrinsic rectifier diode. Low intrinsic gate resistance. Low package inductance. Industry standard packages
Channel Type = N
Maximum Continuous Drain Current = 22 A
Maximum Drain Source Voltage = 650 V
Maximum Drain Source Resistance = 145 mOhms
Maximum Gate Threshold Voltage = 5V
Minimum Gate Threshold Voltage = 2.7V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor - 02AC9795 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor
02AC9795
Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor 02AC9795
MOSFET, N-CH, 650V, 22A, TO-263AA; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 22A, TO-263AA; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA22N65X2 9171451P 02AC9795
Product Name 600V - 700V Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 650V, 22A, To-263Aa; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
IDSS 22000 milliamps 22000 milliamps
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