The IXFH20N80Q is an N-channel enhancement mode MOSFET rated for 800 V drain-source voltage and 20 A continuous drain current, designed for high-power switching applications with avalanche ruggedness and a fast intrinsic rectifier. It is housed in a TO-247AD package, measuring 21.46 mm in length and 16.26 mm in width, with a mounting torque of 1.13 Nm (10 lb.in.). The device has a typical on-state resistance of 0.42 Ω at 25°C, a gate charge of 200 nC, and an avalanche energy rating of 45 mJ at 25°C. It meets UL 94 V-0 flammability requirements and operates from -55°C to +150°C junction temperature. Thermal resistance from junction to case is 0.35 K/W.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
MOSFET, N-CH, 800V, 20A, 150DEG C, 360W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH20N80Q | 38K3170 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH20N80Q | Mosfet, N-Ch, 800V, 20A, 150Deg C, 360W; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
