Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTH110N25T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTH110N25T is an N-channel enhancement mode power MOSFET in a TO-247 package, rated for 250V drain-source voltage and 110A continuous drain current at 25°C. It features a maximum on-state resistance of 26 mΩ at VGS=10V and ID=55A, an avalanche energy rating of 1 J, and a power dissipation of 694 W at 25°C case temperature. The device includes a fast intrinsic rectifier and is avalanche rated. Thermal resistance from junction to case is 0.18 °C/W. Operating junction temperature range is -55°C to +150°C. The part meets RoHS standards and is designed for applications including DC-DC converters, battery chargers, switch-mode power supplies, and motor drives.

Datasheet Summary
Powered by GS/AI

The IXTH110N25T is an N-channel enhancement mode power MOSFET in a TO-247 package, rated for 250V drain-source voltage and 110A continuous drain current at 25°C. It features a maximum on-state resistance of 26 mΩ at VGS=10V and ID=55A, an avalanche energy rating of 1 J, and a power dissipation of 694 W at 25°C case temperature. The device includes a fast intrinsic rectifier and is avalanche rated. Thermal resistance from junction to case is 0.18 °C/W. Operating junction temperature range is -55°C to +150°C. The part meets RoHS standards and is designed for applications including DC-DC converters, battery chargers, switch-mode power supplies, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTH110N25T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTH110N25T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTH110N25T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 250V 110A MOSFET Transistor
278-IXTH110N25T
N-Channel 250V 110A MOSFET Transistor 278-IXTH110N25T
N-Channel MOSFET, 250V, 110A, TO-247 Product overview: IXTH110N25T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH110N25T can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 250V, 110A, TO-247 Product overview: IXTH110N25T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH110N25T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 1258047 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1258047
MOSFETs 1258047
MOSFET 110A 250V TO247

MOSFET 110A 250V TO247

Supplier's Site
MOSFETs - 1684583 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684583
MOSFETs 1684583
MOSFET 110A 250V TO247

MOSFET 110A 250V TO247

Supplier's Site
Mosfet, N-Ch, 250V, 110A, To-247; Channel Type Littelfuse - 03AH1458 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 110A, To-247; Channel Type Littelfuse
03AH1458
Mosfet, N-Ch, 250V, 110A, To-247; Channel Type Littelfuse 03AH1458
MOSFET, N-CH, 250V, 110A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 110A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH110N25T 278-IXTH110N25T 1258047 03AH1458
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options N-Channel 250V 110A MOSFET Transistor MOSFETs Mosfet, N-Ch, 250V, 110A, To-247; Channel Type Littelfuse
Polarity N-Channel N-Channel
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