Littelfuse, Inc. 2500V - 4700V N-Channel Standard Power MOSFETs IXTH02N450HV

Description
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4.5 kV electrical isolation (DCB) UL 94 V-0 Flammability qualified (molding epoxies)
Description
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4.5 kV electrical isolation (DCB) UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Datasheet Summary
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The IXTH02N450HV is an N-channel enhancement mode MOSFET designed for high-voltage applications up to 4500 V, with a continuous drain current of 200 mA at 25°C and a drain-source on-state resistance of 625 Ω. It is packaged in a TO-247HV case, weighing 6 g, and offers high power density and easy mounting. The device operates with a junction temperature range of -55°C to 150°C and has a thermal resistance from junction to case of 1.1 °C/W. It is suited for high-voltage power supplies, capacitor discharge, pulse circuits, and laser and X-ray generation systems.

Datasheet Summary
Powered by GS/AI

The IXTH02N450HV is an N-channel enhancement mode MOSFET designed for high-voltage applications up to 4500 V, with a continuous drain current of 200 mA at 25°C and a drain-source on-state resistance of 625 Ω. It is packaged in a TO-247HV case, weighing 6 g, and offers high power density and easy mounting. The device operates with a junction temperature range of -55°C to 150°C and has a thermal resistance from junction to case of 1.1 °C/W. It is suited for high-voltage power supplies, capacitor discharge, pulse circuits, and laser and X-ray generation systems.

Suppliers

Company
Product
Description
Supplier Links
2500V - 4700V N-Channel Standard Power MOSFETs - IXTH02N450HV - Littelfuse, Inc.
Rosemont, IL, United States
2500V - 4700V N-Channel Standard Power MOSFETs
IXTH02N450HV
2500V - 4700V N-Channel Standard Power MOSFETs IXTH02N450HV
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4.5 kV electrical isolation (DCB) UL 94 V-0 Flammability qualified (molding epoxies)

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4.5 kV electrical isolation (DCB) UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Mosfet, N-Ch, 4.5Kv, 0.2A, To-247Hv; Channel Type Littelfuse - 03AH1444 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 4.5Kv, 0.2A, To-247Hv; Channel Type Littelfuse
03AH1444
Mosfet, N-Ch, 4.5Kv, 0.2A, To-247Hv; Channel Type Littelfuse 03AH1444
MOSFET, N-CH, 4.5KV, 0.2A, TO-247HV; Channel Type:N Channel; Drain Source Voltage Vds:4.5kV; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:6.5V RoHS Compliant: Yes

MOSFET, N-CH, 4.5KV, 0.2A, TO-247HV; Channel Type:N Channel; Drain Source Voltage Vds:4.5kV; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:6.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH02N450HV 03AH1444
Product Name 2500V - 4700V N-Channel Standard Power MOSFETs Mosfet, N-Ch, 4.5Kv, 0.2A, To-247Hv; Channel Type Littelfuse
Polarity N-Channel
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