Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTK140N20P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTK140N20P is a 200 V N-channel enhancement mode power MOSFET designed for high-power switching applications. It is packaged in a TO-264 case, measuring 26.16 mm in length and 5.46 mm between leads. The device has a continuous drain current rating of 140 A at 25°C and a pulsed drain current of 280 A, with an on-resistance of 18 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 100 mJ and features low package inductance and an unclamped inductive switching (UIS) capability. Thermal resistance from junction to case is 0.18°C/W. The device complies with RoHS standards and meets AEC-Q200 qualification requirements. The drain-source diode has a forward voltage of 1.5 V and a repetitive peak current of 280 A.

Datasheet Summary
Powered by GS/AI

The IXTK140N20P is a 200 V N-channel enhancement mode power MOSFET designed for high-power switching applications. It is packaged in a TO-264 case, measuring 26.16 mm in length and 5.46 mm between leads. The device has a continuous drain current rating of 140 A at 25°C and a pulsed drain current of 280 A, with an on-resistance of 18 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 100 mJ and features low package inductance and an unclamped inductive switching (UIS) capability. Thermal resistance from junction to case is 0.18°C/W. The device complies with RoHS standards and meets AEC-Q200 qualification requirements. The drain-source diode has a forward voltage of 1.5 V and a repetitive peak current of 280 A.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTK140N20P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTK140N20P
100V - 1200V N-Channel Standard Power MOSFETs IXTK140N20P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Mosfet, N, To-264; Channel Type Ixys Semiconductor - 58M7654 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-264; Channel Type Ixys Semiconductor
58M7654
Mosfet, N, To-264; Channel Type Ixys Semiconductor 58M7654
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:140A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:800W RoHS Compliant: Yes

MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:140A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:800W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTK140N20P 58M7654
Product Name 100V - 1200V N-Channel Standard Power MOSFETs Mosfet, N, To-264; Channel Type Ixys Semiconductor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - LM5051MAE/NOPB - Rochester Electronics
Texas Instruments
Specs
Package Type SOIC8
Packing Method Tape Reel; Tape & Reel
View Details
N-channel vertical D-MOS logic level FET - BSH105,235 - Nexperia B.V.
Specs
Package Type SOT23; SOT23 SOT23
View Details
4 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R160M1T - AIMZHN120R160M1T - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810022SCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers