Littelfuse, Inc. -100V to -600V P-Channel Power MOSFETs IXTX32P60P

Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
  • -100V to -600V P-Channel Power MOSFETs - IXTX32P60P - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, P-Ch, 600V, 32A, Plus247 Rohs Compliant Ixys Semiconductor - 71AH4597 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Datasheet
Datasheet Summary
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The IXTX32P60P is a P-channel enhancement mode power MOSFET rated for -600V drain-source voltage and -32A continuous drain current, housed in a PLUS247 package. It features a maximum on-resistance of 350 mΩ at -10V gate bias and 25°C, with an avalanche energy rating of 3.5 J. The device is avalanche rated, has a drain-source dv/dt capability of 10 V/ns, and operates with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 0.14°C/W. The MOSFET meets the requirements of the PolarPTM process, features low package inductance, and is suitable for high-side switching, push-pull amplifiers, DC choppers, and automatic test equipment.

Datasheet Summary
Powered by GS/AI

The IXTX32P60P is a P-channel enhancement mode power MOSFET rated for -600V drain-source voltage and -32A continuous drain current, housed in a PLUS247 package. It features a maximum on-resistance of 350 mΩ at -10V gate bias and 25°C, with an avalanche energy rating of 3.5 J. The device is avalanche rated, has a drain-source dv/dt capability of 10 V/ns, and operates with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 0.14°C/W. The MOSFET meets the requirements of the PolarPTM process, features low package inductance, and is suitable for high-side switching, push-pull amplifiers, DC choppers, and automatic test equipment.

Suppliers

Company
Product
Description
Supplier Links
-100V to -600V P-Channel Power MOSFETs - IXTX32P60P - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
-100V to -600V P-Channel Power MOSFETs
IXTX32P60P
-100V to -600V P-Channel Power MOSFETs IXTX32P60P
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Supplier's Site Datasheet
Mosfet, P-Ch, 600V, 32A, Plus247 Rohs Compliant Ixys Semiconductor - 71AH4597 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 600V, 32A, Plus247 Rohs Compliant Ixys Semiconductor
71AH4597
Mosfet, P-Ch, 600V, 32A, Plus247 Rohs Compliant Ixys Semiconductor 71AH4597
MOSFET, P-CH, 600V, 32A, PLUS247 ROHS COMPLIANT: YES

MOSFET, P-CH, 600V, 32A, PLUS247 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTX32P60P 71AH4597
Product Name -100V to -600V P-Channel Power MOSFETs Mosfet, P-Ch, 600V, 32A, Plus247 Rohs Compliant Ixys Semiconductor
Polarity P-Channel
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