The IXFK210N30X3 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-264K case with a weight of 10 g and features an avalanche-rated structure with low on-resistance of 5.5 mΩ maximum at 25°C, a continuous drain current of 210 A, and a drain-source voltage rating of 300 V. The device supports a peak pulse drain current of 650 A and has a maximum power dissipation of 1250 W. Thermal resistance from junction to case is 0.10 °C/W. The package has low inductance and is rated for operation from -55 °C to 150 °C junction temperature. The device meets international standard packaging requirements and is rated for 50 V/ns dv/dt.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
MOSFET, N-CH, 300V, 210A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET, 210A, 300V, 1.25KW, TO-264 ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK210N30X3 | 03AH0648 | 29AK0427 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 300V, 210A, 1.25Kw; Channel Type Littelfuse | Mosfet, 210A, 300V, 1.25Kw, To-264 Rohs Compliant Littelfuse |
| Polarity | N-Channel |
