Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP5N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFP5N100P is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 1000 V drain-source breakdown voltage and 5 A continuous drain current. It features a maximum on-resistance of 2.8 Ω at 10 V gate-source voltage, avalanche capability, and a fast intrinsic diode with reverse recovery time of 200 ns. The device supports a peak pulse current of 10 A, an energy rating of 300 mJ, and operates with a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to case is 0.50 °C/W. It complies with international standard packages and is rated for high dv/dt applications. The part is avalanche-rated and meets the IEC 60286-3 and RoHS standards for packaging.

Datasheet Summary
Powered by GS/AI

The IXFP5N100P is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 1000 V drain-source breakdown voltage and 5 A continuous drain current. It features a maximum on-resistance of 2.8 Ω at 10 V gate-source voltage, avalanche capability, and a fast intrinsic diode with reverse recovery time of 200 ns. The device supports a peak pulse current of 10 A, an energy rating of 300 mJ, and operates with a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to case is 0.50 °C/W. It complies with international standard packages and is rated for high dv/dt applications. The part is avalanche-rated and meets the IEC 60286-3 and RoHS standards for packaging.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFP5N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFP5N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP5N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 5A 1000V 2.8ohm MOSFET Transistor
278-IXFP5N100P
N-Channel 5A 1000V 2.8ohm MOSFET Transistor 278-IXFP5N100P
Power Field-Effect Transistor, 5A I(D), 1000V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXFP5N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 5A, 1000V, 2.8ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5A, 1000V, 2.8ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP5N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 5A I(D), 1000V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXFP5N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 5A, 1000V, 2.8ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5A, 1000V, 2.8ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP5N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 5A, To-220 Rohs Compliant Ixys Semiconductor - 71AH4555 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 5A, To-220 Rohs Compliant Ixys Semiconductor
71AH4555
Mosfet, N-Ch, 1Kv, 5A, To-220 Rohs Compliant Ixys Semiconductor 71AH4555
MOSFET, N-CH, 1KV, 5A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 1KV, 5A, TO-220 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP5N100P 278-IXFP5N100P 71AH4555
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 5A 1000V 2.8ohm MOSFET Transistor Mosfet, N-Ch, 1Kv, 5A, To-220 Rohs Compliant Ixys Semiconductor
Polarity N-Channel
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