Littelfuse, Inc. 100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTH10N100D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1700V N-Channel Depletion Mode Power MOSFETs - IXTH10N100D2 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1700V N-Channel Depletion Mode Power MOSFETs
IXTH10N100D2
100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTH10N100D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 10A, 150Deg C, 695W; Channel Type Littelfuse - 03AH1451 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 10A, 150Deg C, 695W; Channel Type Littelfuse
03AH1451
Mosfet, N-Ch, 1Kv, 10A, 150Deg C, 695W; Channel Type Littelfuse 03AH1451
MOSFET, N-CH, 1KV, 10A, 150DEG C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 1KV, 10A, 150DEG C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH10N100D2 03AH1451
Product Name 100V - 1700V N-Channel Depletion Mode Power MOSFETs Mosfet, N-Ch, 1Kv, 10A, 150Deg C, 695W; Channel Type Littelfuse
Polarity N-Channel
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