Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTN210P10T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTN210P10T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTN210P10T
-50V to -200V P-Channel Power MOSFETs IXTN210P10T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore
P-Channel 100V 210A MOSFET Transistor
278-IXTN210P10T
P-Channel 100V 210A MOSFET Transistor 278-IXTN210P10T
P-Channel MOSFET, 100V, 210A, TO-247 Product overview: IXTN210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 210A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN210P10T can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 100V, 210A, TO-247 Product overview: IXTN210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 210A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN210P10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Module, P Ch, 100V, 210A Rohs Compliant Ixys Semiconductor - 71AH4575 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, P Ch, 100V, 210A Rohs Compliant Ixys Semiconductor
71AH4575
Mosfet Module, P Ch, 100V, 210A Rohs Compliant Ixys Semiconductor 71AH4575
MOSFET MODULE, P CH, 100V, 210A ROHS COMPLIANT: YES

MOSFET MODULE, P CH, 100V, 210A ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTN210P10T 278-IXTN210P10T 71AH4575
Product Name -50V to -200V P-Channel Power MOSFETs P-Channel 100V 210A MOSFET Transistor Mosfet Module, P Ch, 100V, 210A Rohs Compliant Ixys Semiconductor
Polarity P-Channel
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