Littelfuse, Inc. Datasheets for Insulated Gate Bipolar Transistors (IGBT)

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more

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Product Name Notes
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal...
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also...
Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In...
Features: 1.5A to 30A Peak Source/Sink Drive Current Wide Operating Voltage Range -40°C to +125°C Extended Operating Temperature Range Logic Input Withstands Negative Swing of up to 5V Matched Rise...
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low...
NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These...
Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes...
The C044BG400 IGBT Gate Driver is a low power consumption driver with on board VCE desaturation detection for high reliability application. The driver features a fiber-optic communication interface for drive,...
The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current,...
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An...
The IXDD604SI & SIA / IXDF604SI & SIA / IXDI604SI & SIA / IXDN604SI & SIA dual high-speed gate drivers are especially well suited for driving our latest MOSFETs and...
The IXDD609SI / IXDI609SI / IXDN609SI high-speed gate drivers are especially well suited for driving our latest MOSFETs and IGBTs. The IXD_609SI high-current output can source and sink 9A of...
The IXDD614SI / IXDI614SI / IXDN614SI high-speed gate drivers are especially well suited for driving our latest MOSFETs and IGBTs. The IXD_614SI high-current output can source and sink 14A of...
The IXYS family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS,...
This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability. They are particularly suitable for high voltage switching applications. We...

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