The IXTH16N10D2 is a n-channel depletion-mode MOSFET designed for applications requiring normally-on operation, such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-247 case with a weight of 6 g. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 16 A, and a maximum drain-source on-resistance of 64 mΩ at 25°C. Its gate-source voltage ranges from -20 V to +20 V continuous, with a transient limit of ±30 V. The part operates from -55°C to +175°C junction temperature and meets UL 94 V-0 flammability classification for its molding epoxy. Thermal resistance from junction to case is 0.21 °C/W. The device includes a body diode with a forward voltage of up to 1.30 V at 16 A and a reverse recovery charge of 0.88 μC.
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
MOSFET, N-CH, 100V, 16A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:-; Product Range:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH16N10D2 | 03AH1471 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: D2 - IXTH16N10D2 | Mosfet, N-Ch, 100V, 16A, To-247; Channel Type Littelfuse |
| Polarity | N-Channel |
