Littelfuse, Inc. 100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTT16N20D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Datasheet Summary
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The IXTT16N20D2 is a 200V N-channel depletion-mode MOSFET designed for applications requiring normally-on operation, such as audio amplifiers, start-up circuits, and protection circuits. It is housed in a TO-268 package, weighing 4 g, and features a maximum drain-source on-resistance of 95 mΩ at 25°C with 8 A drain current. The device supports a continuous drain current of 16 A and a peak dissipation of 695 W at 25°C. Its junction temperature range is -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. The molding epoxies meet UL 94 V-0 flammability classification. The gate-source voltage is rated for continuous ±20 V and transient ±30 V. Thermal resistance from junction to case is 0.18°C/W.

Datasheet Summary
Powered by GS/AI

The IXTT16N20D2 is a 200V N-channel depletion-mode MOSFET designed for applications requiring normally-on operation, such as audio amplifiers, start-up circuits, and protection circuits. It is housed in a TO-268 package, weighing 4 g, and features a maximum drain-source on-resistance of 95 mΩ at 25°C with 8 A drain current. The device supports a continuous drain current of 16 A and a peak dissipation of 695 W at 25°C. Its junction temperature range is -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. The molding epoxies meet UL 94 V-0 flammability classification. The gate-source voltage is rated for continuous ±20 V and transient ±30 V. Thermal resistance from junction to case is 0.18°C/W.

Suppliers

Company
Product
Description
Supplier Links
100V - 1700V N-Channel Depletion Mode Power MOSFETs - IXTT16N20D2 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1700V N-Channel Depletion Mode Power MOSFETs
IXTT16N20D2
100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTT16N20D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 16A, To-268; Channel Type Littelfuse - 03AH1822 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 16A, To-268; Channel Type Littelfuse
03AH1822
Mosfet, N-Ch, 200V, 16A, To-268; Channel Type Littelfuse 03AH1822
MOSFET, N-CH, 200V, 16A, TO-268; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 16A, TO-268; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTT16N20D2 03AH1822
Product Name 100V - 1700V N-Channel Depletion Mode Power MOSFETs Mosfet, N-Ch, 200V, 16A, To-268; Channel Type Littelfuse
Polarity N-Channel
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