The IXFH10N80P is an N-channel enhancement mode power MOSFET with an 800 V drain-source breakdown voltage and a continuous drain current of 10 A at 25 ⁰C. It is packaged in a TO-247 case, weighing 6.0 g, and features an avalanche-rated design with a fast intrinsic diode exhibiting a reverse recovery time of up to 250 ns. The device has a maximum on-resistance of 1.1 Ω at 10 V gate-source voltage and 5 A drain current and is rated for junction temperatures from -55 ⁰C to 150 ⁰C. It meets the AEC-Q200 standard and is suited for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. Mounting torque for the TO-247 package is 1.13 Nm. The device supports a transient gate-source voltage of ±40 V and a maximum dV/dt of 10 V/ns under specified conditions.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, TO-247, 3 PIN Product overview: IXFH10N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 800V, 1.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 800V, 1.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH10N80P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 800V, 10A, TO-247 ROHS COMPLIANT: YES
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH10N80P | 278-IXFH10N80P | 71AH4540 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 10A 800V 1.1ohm MOSFET Transistor | Mosfet, N-Ch, 800V, 10A, To-247 Rohs Compliant Ixys Semiconductor |
| Polarity | N-Channel |
