Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH170N10P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH170N10P is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-247 case, weighing 6 grams, with a drain tab. The device has a drain-source breakdown voltage of 100 V, continuous drain current of 170 A at 25°C, and a maximum pulsed drain current of 350 A. Its on-resistance is 9 mΩ at 10 V gate voltage and 85 A drain current. The avalanche energy rating is 2 J at 25°C, and the maximum junction temperature is 175°C. It features a fast intrinsic rectifier with reverse recovery time of 150 ns, low gate charge of 198 nC, and is avalanche rated. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Datasheet Summary
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The IXFH170N10P is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-247 case, weighing 6 grams, with a drain tab. The device has a drain-source breakdown voltage of 100 V, continuous drain current of 170 A at 25°C, and a maximum pulsed drain current of 350 A. Its on-resistance is 9 mΩ at 10 V gate voltage and 85 A drain current. The avalanche energy rating is 2 J at 25°C, and the maximum junction temperature is 175°C. It features a fast intrinsic rectifier with reverse recovery time of 150 ns, low gate charge of 198 nC, and is avalanche rated. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH170N10P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH170N10P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH170N10P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
MOSFETs - 193509 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
193509
MOSFETs 193509
MOSFET N-Channel 100V 170A TO247

MOSFET N-Channel 100V 170A TO247

Supplier's Site
MOSFETs - 193509P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
193509P
MOSFETs 193509P
MOSFET N-Channel 100V 170A TO247

MOSFET N-Channel 100V 170A TO247

Supplier's Site
MOSFETs - 1684470 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684470
MOSFETs 1684470
MOSFET N-Channel 100V 170A TO247

MOSFET N-Channel 100V 170A TO247

Supplier's Site
Mosfet, N, To-247; Channel Type Ixys Semiconductor - 58M7594 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Ixys Semiconductor
58M7594
Mosfet, N, To-247; Channel Type Ixys Semiconductor 58M7594
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:714W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:714W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH170N10P 193509 193509P 58M7594
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs Mosfet, N, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
Package Type TO-247; TO-247 TO-247; To-247 TO-247; TO-247 TO-3; TO-247
MOSFET Operating Mode Enhancement
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