Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-ch X2 Series MOSFET 650V 4A TO-220
N-ch X2 Series MOSFET 650V 4A TO-220
N-ch X2 Series MOSFET 650V 4A TO-220
MOSFET, N-CH, 650V, 4A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:- RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP4N65X2 | 9171485P | 9171485 | 02AC9842 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFETs | MOSFETs | Mosfet, N-Ch, 650V, 4A, To-220; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
