Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFH46N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFH46N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features a fast intrinsic diode. The device has a drain-source voltage rating of 650 V, a continuous drain current of 46 A at 25°C, and a maximum pulsed drain current of 100 A. Its on-resistance is 69 mΩ at VGS = 10 V and ID = 23 A. It is avalanche rated with an energy rating of 2 J at 25°C and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.19 °C/W. The package has low inductance and complies with international standard dimensions.

Datasheet Summary
Powered by GS/AI

The IXFH46N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features a fast intrinsic diode. The device has a drain-source voltage rating of 650 V, a continuous drain current of 46 A at 25°C, and a maximum pulsed drain current of 100 A. Its on-resistance is 69 mΩ at VGS = 10 V and ID = 23 A. It is avalanche rated with an energy rating of 2 J at 25°C and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.19 °C/W. The package has low inductance and complies with international standard dimensions.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFH46N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFH46N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFH46N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFH46N65X2
MOSFET Transistor 278-IXFH46N65X2
Power Field-Effect Transistor, Product overview: IXFH46N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH46N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFH46N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH46N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 9171413 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171413
MOSFETs 9171413
N-ch X2 Series MOSFET 650V 46A TO-247

N-ch X2 Series MOSFET 650V 46A TO-247

Supplier's Site
MOSFETs - 9171413P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9171413P
MOSFETs 9171413P
N-ch X2 Series MOSFET 650V 46A TO-247

N-ch X2 Series MOSFET 650V 46A TO-247

Supplier's Site
MOSFETs - 1684811 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684811
MOSFETs 1684811
N-ch X2 Series MOSFET 650V 46A TO-247

N-ch X2 Series MOSFET 650V 46A TO-247

Supplier's Site
Mosfet, N-Ch, 650V, 46A, To-247; Channel Type Ixys Semiconductor - 02AC9800 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 46A, To-247; Channel Type Ixys Semiconductor
02AC9800
Mosfet, N-Ch, 650V, 46A, To-247; Channel Type Ixys Semiconductor 02AC9800
MOSFET, N-CH, 650V, 46A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 46A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH46N65X2 278-IXFH46N65X2 9171413 9171413P 02AC9800
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor MOSFETs MOSFETs Mosfet, N-Ch, 650V, 46A, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - 2EDF8275FXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-DSO-16
Packing Method Tape Reel; Tape & Reel
View Details
Single FETs, MOSFETs - 2N7002CKVL-ND - DigiKey
Specs
Polarity N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) - ALD1108ESCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode E-trimmable, quad as dual pair, common source
V(BR)DSS 10 volts
View Details
3 suppliers
CSD25211W1015 P-Channel NexFET? Power MOSFET - CSD25211W1015 - Texas Instruments
Specs
Polarity P-Channel
V(BR)DSS -20 volts
rDS(on) 0.0330 ohms
View Details
7 suppliers