Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB132N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFB132N50P3 is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a PLUS264TM case with a weight of 10 g and a maximum lead temperature for soldering of 300 °C. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 132 A at 25 °C, and a maximum on-state resistance of 39 mΩ at 10 V gate voltage. It features an avalanche rating, fast intrinsic rectifier, low package inductance, and a repetitive avalanche current capability of 66 A. The thermal resistance from junction to case is 0.066 °C/W. The part meets AEC-Q200 qualification and is RoHS compliant. Its gate charge is 267 nC and reverse recovery time is 250 ns under specified conditions.

Datasheet Summary
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The IXFB132N50P3 is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a PLUS264TM case with a weight of 10 g and a maximum lead temperature for soldering of 300 °C. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 132 A at 25 °C, and a maximum on-state resistance of 39 mΩ at 10 V gate voltage. It features an avalanche rating, fast intrinsic rectifier, low package inductance, and a repetitive avalanche current capability of 66 A. The thermal resistance from junction to case is 0.066 °C/W. The part meets AEC-Q200 qualification and is RoHS compliant. Its gate charge is 267 nC and reverse recovery time is 250 ns under specified conditions.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB132N50P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB132N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB132N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFB132N50P3
MOSFET Transistor 278-IXFB132N50P3
Power Field-Effect Transistor, Product overview: IXFB132N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB132N50P3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFB132N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB132N50P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 8024348P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024348P
MOSFETs 8024348P
MOSFET 500V 132A Polar3 HiPerFET PLUS264

MOSFET 500V 132A Polar3 HiPerFET PLUS264

Supplier's Site
MOSFETs - 8024348 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8024348
MOSFETs 8024348
MOSFET 500V 132A Polar3 HiPerFET PLUS264

MOSFET 500V 132A Polar3 HiPerFET PLUS264

Supplier's Site
MOSFETs - 9200984 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9200984
MOSFETs 9200984
MOSFET 500V 132A Polar3 HiPerFET PLUS264

MOSFET 500V 132A Polar3 HiPerFET PLUS264

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB132N50P3 278-IXFB132N50P3 8024348P 8024348
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFET Transistor MOSFETs MOSFETs
Polarity N-Channel N-Channel
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