The IXTT16P60P is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, DC choppers, and current regulators. It is packaged in a TO-268 case with a weight of 4 g and features an avalanche-rated, rugged PolarPTM process with a low package inductance and fast intrinsic diode. The device has a maximum drain-source voltage of -600 V, a continuous drain current of -16 A, and a maximum drain-source on-state resistance of 720 mΩ at 25°C and VGS = -10 V. It is rated for a junction temperature range of -55°C to +150°C and meets the thermal impedance specification of 0.27 °C/W from junction to case. The device is avalanche rated and complies with RoHS standards.
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
MOSFET, P-CH, 600V, 16A, TO-268; Channel Type:P Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTT16P60P | 03AH1824 |
| Product Name | -100V to -600V P-Channel Power MOSFETs | Mosfet, P-Ch, 600V, 16A, To-268; Channel Type Littelfuse |
| Polarity | P-Channel |
