Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFH80N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
  • 24 V Bidirectional 250 W Discrete TVS Diode - IXFH80N65X2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 650V, 80A, To-247; Channel Type Ixys Semiconductor - 02AC9803 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFH80N65X2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFH80N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFH80N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 650V 80A MOSFET Transistor
278-IXFH80N65X2
N-Channel 650V 80A MOSFET Transistor 278-IXFH80N65X2
650V N-Channel MOSFET, 80A Product overview: IXFH80N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH80N65X2 can be used for catalog matching and distributor lookup.

650V N-Channel MOSFET, 80A Product overview: IXFH80N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH80N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 80A, To-247; Channel Type Ixys Semiconductor - 02AC9803 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 80A, To-247; Channel Type Ixys Semiconductor
02AC9803
Mosfet, N-Ch, 650V, 80A, To-247; Channel Type Ixys Semiconductor 02AC9803
MOSFET, N-CH, 650V, 80A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 80A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH80N65X2 278-IXFH80N65X2 02AC9803
Product Name 24 V Bidirectional 250 W Discrete TVS Diode N-Channel 650V 80A MOSFET Transistor Mosfet, N-Ch, 650V, 80A, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel
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