Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA72N30X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
  • 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA72N30X3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W; Channel Type Littelfuse - 03AH0477 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFA72N30X3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab, weighing 2.5 g. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 72 A at 25°C, and a maximum drain-source on-resistance of 19 mΩ at 10 V gate-source voltage. It is avalanche rated with a single-pulse energy rating of 1 J and features low gate charge and package inductance. The operating junction temperature ranges from -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. The part meets the International Standard Package specification and is rated for a thermal resistance from junction to case of 0.32 °C/W.

Datasheet Summary
Powered by GS/AI

The IXFA72N30X3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab, weighing 2.5 g. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 72 A at 25°C, and a maximum drain-source on-resistance of 19 mΩ at 10 V gate-source voltage. It is avalanche rated with a single-pulse energy rating of 1 J and features low gate charge and package inductance. The operating junction temperature ranges from -55°C to 150°C, with a maximum lead temperature for soldering of 300°C. The part meets the International Standard Package specification and is rated for a thermal resistance from junction to case of 0.32 °C/W.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA72N30X3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFA72N30X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA72N30X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W; Channel Type Littelfuse - 03AH0477 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W; Channel Type Littelfuse
03AH0477
Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W; Channel Type Littelfuse 03AH0477
MOSFET, N-CH, 300V, 72A, 150DEG C, 390W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:72A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 300V, 72A, 150DEG C, 390W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:72A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA72N30X3 03AH0477
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W; Channel Type Littelfuse
Polarity N-Channel
Unlock Full Specs
to access all available technical data