The IXFN82N60P is an N-channel enhancement mode power MOSFET for high-speed switching applications such as DC-DC converters and AC motor drives. It is packaged in a miniBLOC with an aluminium nitride plastic body and weighs 30 g. It has a 600 V drain-source voltage rating, 82 A continuous drain current at 25 °C, and a 75 mΩ on-state resistance at 10 V gate-source voltage and 41 A drain current. The device is avalanche rated with 5 J single pulse energy, features a fast intrinsic rectifier with 200 ns reverse recovery time, and supports a 20 V/ns drain-to-source dv/dt rating. Thermal limits are -55 °C to 150 °C for operating and storage. Junction-to-case thermal resistance is 0.12 °C/W. It complies with RoHS standards.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
600V N-Ch MOSFET, 82A, 0.075Ω, 4-Pin Product overview: IXFN82N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 82A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN82N60P can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 600V, 72A, SOT-227B; Channel Type:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:600V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.04kW RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN82N60P | 194130 | 278-IXFN82N60P | 58Y5889 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs | 600V 82A MOSFET Transistor | Mosfet, N-Ch, 600V, 72A, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT-227 | Sot-227b | TO-3 | |
| MOSFET Operating Mode | Enhancement |
