The IXTH24N50 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, motor controls, and DC choppers. It is packaged in a TO-247 AD case, measuring 21.46 mm in length and 5.72 mm in lead pitch. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 24 A at 25°C, and a maximum pulsed drain current of 96 A. Its on-resistance is 0.23 Ω at a gate-source voltage of 10 V and a drain current of 12 A. The gate charge is 28 to 40 nC, and the thermal resistance from junction to case is 0.25 K/W. The operating junction temperature ranges from -55°C to 150°C. The device features a rugged polysilicon gate structure, low package inductance under 5 nH, and an isolated mounting screw hole for easy installation. It meets international standard package requirements.
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
N CHANNEL MOSFET, 500V, 24A, TO-247AD; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH24N50 | 72K6136 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Standard - Series: High Voltage - IXTH24N50 | N Channel Mosfet, 500V, 24A, To-247Ad; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
