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Littelfuse, Inc. 60V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH270N06T3

Description
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Features: Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages Advantages: High power density Easy to mount Space savings Applications: Off-line uninterruptible power supplies (UPS) DC-DC converters Brushed/brushless DC motor drive High-current switching power supplies Primary-side switches Electric forklifts Light electric vehicles (LEV) Cordless home appliances and power tools Unmanned aerial vehicles (UAV)
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Suppliers

Company
Product
Description
Supplier Links
60V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH270N06T3 - Littelfuse, Inc.
Chicago, IL, United States
60V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH270N06T3
60V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH270N06T3
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Features: Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages Advantages: High power density Easy to mount Space savings Applications: Off-line uninterruptible power supplies (UPS) DC-DC converters Brushed/brushless DC motor drive High-current switching power supplies Primary-side switches Electric forklifts Light electric vehicles (LEV) Cordless home appliances and power tools Unmanned aerial vehicles (UAV)

The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Features: Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages Advantages: High power density Easy to mount Space savings Applications: Off-line uninterruptible power supplies (UPS) DC-DC converters Brushed/brushless DC motor drive High-current switching power supplies Primary-side switches Electric forklifts Light electric vehicles (LEV) Cordless home appliances and power tools Unmanned aerial vehicles (UAV)

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 270A, To-247; Channel Type Littelfuse - 03AH0571 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 270A, To-247; Channel Type Littelfuse
03AH0571
Mosfet, N-Ch, 60V, 270A, To-247; Channel Type Littelfuse 03AH0571
MOSFET, N-CH, 60V, 270A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 60V, 270A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH270N06T3 03AH0571
Product Name 60V Trench Gate Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 60V, 270A, To-247; Channel Type Littelfuse
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 270000 milliamps 270000 milliamps
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