Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFH270N06T3 IXFH270N06T3

The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages

MOSFET, N-CH, 60V, 270A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes