Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH44N50P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH44N50P is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-247 case with a drain tab, measuring 20.80-21.46 mm in length and 15.75-16.26 mm in width. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 44 A at 25°C, and a maximum pulsed drain current of 110 A. Its drain-source on-resistance is 140 mΩ at V_GS = 10 V and I_D = 22 A. The MOSFET is avalanche rated, features a fast intrinsic rectifier, and has a low gate charge of 98 nC. It meets RoHS standards and operates within a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.21°C/W.

Datasheet Summary
Powered by GS/AI

The IXFH44N50P is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-247 case with a drain tab, measuring 20.80-21.46 mm in length and 15.75-16.26 mm in width. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 44 A at 25°C, and a maximum pulsed drain current of 110 A. Its drain-source on-resistance is 140 mΩ at V_GS = 10 V and I_D = 22 A. The MOSFET is avalanche rated, features a fast intrinsic rectifier, and has a low gate charge of 98 nC. It meets RoHS standards and operates within a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.21°C/W.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH44N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH44N50P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH44N50P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 44A 500V 0.14ohm MOSFET Transistor
278-IXFH44N50P
N-Channel 44A 500V 0.14ohm MOSFET Transistor 278-IXFH44N50P
Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH44N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 44A, 500V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 44A, 500V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH44N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH44N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 44A, 500V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 44A, 500V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH44N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 194552 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194552
MOSFETs 194552
MOSFET N-Channel 500V 44A TO247AD

MOSFET N-Channel 500V 44A TO247AD

Supplier's Site
MOSFETs - 9200785 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9200785
MOSFETs 9200785
MOSFET N-Channel 500V 44A TO247AD

MOSFET N-Channel 500V 44A TO247AD

Supplier's Site
MOSFETs - 194552P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
194552P
MOSFETs 194552P
MOSFET N-Channel 500V 44A TO247AD

MOSFET N-Channel 500V 44A TO247AD

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IXFH44N50P
Triode/MOS Tube/Transistor >> MOSFETs IXFH44N50P
500V 44A 658W 140mΩ@22A,10V 5V@4mA null TO-247-3 MOSFETs ROHS

500V 44A 658W 140mΩ@22A,10V 5V@4mA null TO-247-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH44N50P 278-IXFH44N50P 194552 194552P IXFH44N50P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 44A 500V 0.14ohm MOSFET Transistor MOSFETs MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-247; TO-247 TO-247; To-247ad TO-247; TO-247 TO-247
MOSFET Operating Mode Enhancement
Number of units in IC 1
V(BR)DSS 500 volts
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