Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTP32P05T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Datasheet
Datasheet Summary
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The IXTP32P05T is a P-channel enhancement mode MOSFET rated for -50 V drain-source voltage and -32 A continuous drain current, housed in a TO-220 package. It features a maximum on-state resistance of 39 mΩ at 25°C, avalanche capability, and an extended forward-bias safe operating area. The device includes a fast intrinsic diode with a reverse recovery charge of 21 nC and a body diode forward voltage of -1.5 V. Thermal resistance from junction to case is 1.5 °C/W, with a maximum junction temperature of 150°C. The part is rated for operation from -55°C to 150°C and meets international standard package requirements. It is suited for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications.

Datasheet Summary
Powered by GS/AI

The IXTP32P05T is a P-channel enhancement mode MOSFET rated for -50 V drain-source voltage and -32 A continuous drain current, housed in a TO-220 package. It features a maximum on-state resistance of 39 mΩ at 25°C, avalanche capability, and an extended forward-bias safe operating area. The device includes a fast intrinsic diode with a reverse recovery charge of 21 nC and a body diode forward voltage of -1.5 V. Thermal resistance from junction to case is 1.5 °C/W, with a maximum junction temperature of 150°C. The part is rated for operation from -55°C to 150°C and meets international standard package requirements. It is suited for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTP32P05T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTP32P05T
-50V to -200V P-Channel Power MOSFETs IXTP32P05T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Mosfet, P-Ch, 50V, 32A, To-220; Channel Type Littelfuse - 03AH1680 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 50V, 32A, To-220; Channel Type Littelfuse
03AH1680
Mosfet, P-Ch, 50V, 32A, To-220; Channel Type Littelfuse 03AH1680
MOSFET, P-CH, 50V, 32A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, P-CH, 50V, 32A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP32P05T 03AH1680
Product Name -50V to -200V P-Channel Power MOSFETs Mosfet, P-Ch, 50V, 32A, To-220; Channel Type Littelfuse
Polarity P-Channel
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