Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH240N15X4

Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
  • 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH240N15X4 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 150V, 240A, 175Deg C, 940W; Channel Type Littelfuse - 03AH1490 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXTH240N15X4 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a maximum drain-source voltage of 150 V and a continuous drain current of 240 A at 25°C. The device has a maximum on-state resistance of 4.4 mΩ at 10 V gate drive and 120 A drain current, and is avalanche rated with a single-pulse energy absorption capability of 1.2 J. Its thermal resistance junction-to-case is 0.21 °C/W for the TO-247 package, and it operates over a junction temperature range of -55 °C to 175 °C. The part meets international standard package dimensions and is rated for lead soldering temperatures up to 260 °C for 10 seconds. It is compliant with RoHS and is designed for low inductance and easy mounting.

Datasheet Summary
Powered by GS/AI

The IXTH240N15X4 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a maximum drain-source voltage of 150 V and a continuous drain current of 240 A at 25°C. The device has a maximum on-state resistance of 4.4 mΩ at 10 V gate drive and 120 A drain current, and is avalanche rated with a single-pulse energy absorption capability of 1.2 J. Its thermal resistance junction-to-case is 0.21 °C/W for the TO-247 package, and it operates over a junction temperature range of -55 °C to 175 °C. The part meets international standard package dimensions and is rated for lead soldering temperatures up to 260 °C for 10 seconds. It is compliant with RoHS and is designed for low inductance and easy mounting.

Suppliers

Company
Product
Description
Supplier Links
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH240N15X4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTH240N15X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH240N15X4
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 150V, 240A, 175Deg C, 940W; Channel Type Littelfuse - 03AH1490 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 150V, 240A, 175Deg C, 940W; Channel Type Littelfuse
03AH1490
Mosfet, N-Ch, 150V, 240A, 175Deg C, 940W; Channel Type Littelfuse 03AH1490
MOSFET, N-CH, 150V, 240A, 175DEG C, 940W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 150V, 240A, 175DEG C, 940W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH240N15X4 03AH1490
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 150V, 240A, 175Deg C, 940W; Channel Type Littelfuse
Polarity N-Channel
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