Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH240N15X4

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

MOSFET, N-CH, 150V, 240A, 175DEG C, 940W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes