Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX98N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFX98N50P3 is an N-channel enhancement mode power MOSFET rated for 500 V drain-source voltage and 98 A continuous drain current, designed for high-speed switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in the PLUS247 format, weighing 6 g, with a maximum junction temperature of 150°C and thermal resistance from junction to case of 0.096°C/W. The device features a low on-resistance of 50 mΩ at VGS = 10 V and a fast intrinsic diode with reverse recovery time ≤250 ns. It is avalanche rated, has low gate charge and package inductance, and meets RoHS standards.

Datasheet Summary
Powered by GS/AI

The IXFX98N50P3 is an N-channel enhancement mode power MOSFET rated for 500 V drain-source voltage and 98 A continuous drain current, designed for high-speed switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in the PLUS247 format, weighing 6 g, with a maximum junction temperature of 150°C and thermal resistance from junction to case of 0.096°C/W. The device features a low on-resistance of 50 mΩ at VGS = 10 V and a fast intrinsic diode with reverse recovery time ≤250 ns. It is avalanche rated, has low gate charge and package inductance, and meets RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX98N50P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX98N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX98N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFX98N50P3
MOSFET Transistor 278-IXFX98N50P3
Power Field-Effect Transistor, Product overview: IXFX98N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX98N50P3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFX98N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX98N50P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 500V, 98A, Plus247; Channel Type Ixys Semiconductor - 02AC9823 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 98A, Plus247; Channel Type Ixys Semiconductor
02AC9823
Mosfet, N-Ch, 500V, 98A, Plus247; Channel Type Ixys Semiconductor 02AC9823
MOSFET, N-CH, 500V, 98A, PLUS247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:98A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 98A, PLUS247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:98A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX98N50P3 278-IXFX98N50P3 02AC9823
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFET Transistor Mosfet, N-Ch, 500V, 98A, Plus247; Channel Type Ixys Semiconductor
Polarity N-Channel
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