Littelfuse, Inc. 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH18N100Q3

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance

MOSFET, N-CH, 1KV, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:6.5V RoHS Compliant: Yes