The IXTT20P50P is a P-channel enhancement mode power MOSFET designed for high-side switching, DC choppers, and automation test equipment. It is packaged in a TO-268 case with a weight of 4 g, featuring low package inductance and an avalanche-rated rugged PolarPTM process. The device has a maximum drain-source voltage of -500 V, a continuous drain current of -20 A at 25°C, and a drain-source on-resistance of 450 mΩ at -10 V gate drive. It supports a peak pulse current of -60 A and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.27 °C/W. The MOSFET is rated for dynamic dv/dt of 10 V/ns and meets the IEC 60286-3 standard for mounting torque. The source-drain diode has a forward voltage of -2.8 V at -10 A, and reverse recovery time of 406 ns.
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Power Field-Effect Transistor, Product overview: IXTT20P50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT20P50P can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 500V, 20A, TO-268; Channel Type:P Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTT20P50P | 278-IXTT20P50P | 03AH1829 |
| Product Name | -100V to -600V P-Channel Power MOSFETs | MOSFET Transistor | Mosfet, P-Ch, 500V, 20A, To-268; Channel Type Littelfuse |
| Polarity | P-Channel |
