Littelfuse, Inc. -100V to -600V P-Channel Power MOSFETs IXTK170P10P

Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Datasheet
Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Datasheet

Suppliers

Company
Product
Description
Supplier Links
-100V to -600V P-Channel Power MOSFETs - IXTK170P10P - Littelfuse, Inc.
Rosemont, IL, United States
-100V to -600V P-Channel Power MOSFETs
IXTK170P10P
-100V to -600V P-Channel Power MOSFETs IXTK170P10P
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Supplier's Site Datasheet
Mosfet, P-Ch, 100V, 170A, 150Deg C, 890W; Channel Type Littelfuse - 03AH1563 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 100V, 170A, 150Deg C, 890W; Channel Type Littelfuse
03AH1563
Mosfet, P-Ch, 100V, 170A, 150Deg C, 890W; Channel Type Littelfuse 03AH1563
MOSFET, P-CH, 100V, 170A, 150DEG C, 890W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, P-CH, 100V, 170A, 150DEG C, 890W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTK170P10P 03AH1563
Product Name -100V to -600V P-Channel Power MOSFETs Mosfet, P-Ch, 100V, 170A, 150Deg C, 890W; Channel Type Littelfuse
Polarity P-Channel
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