Littelfuse, Inc. Enhancement Mode IXSH40N120L2KHV

Description
Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance Ciss = 1214 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 28.6 ns Kelvin source connection
  • Enhancement Mode - IXSH40N120L2KHV - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance Ciss = 1214 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 28.6 ns Kelvin source connection
Datasheet

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Enhancement Mode - IXSH40N120L2KHV - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Enhancement Mode
IXSH40N120L2KHV
Enhancement Mode IXSH40N120L2KHV
Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance Ciss = 1214 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 28.6 ns Kelvin source connection

Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 mΩ SiC MOSFET technology with -3/+15...+18 V gate drive Low input capacitance Ciss = 1214 pF Maximum virtual junction temperature of Tvj = 175 ⁰C Ultra-fast intrinsic body diode with trr = 28.6 ns Kelvin source connection

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXSH40N120L2KHV
Product Name Enhancement Mode
MOSFET Operating Mode Enhancement
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