The IXFN27N120SK is a silicon carbide power MOSFET designed for high-voltage switching applications such as solar inverters, motor drives, and UPS systems. It is packaged in an industry-standard SOT-227B (minibloc) format with a backside isolated aluminum nitride baseplate, weighing 30 g. The device has a drain-source breakdown voltage of 1200 V, a maximum continuous drain current of 27 A at 25°C, and a maximum on-state resistance of 98 mΩ at 25°C. It features a Kelvin source connection for simplified gate driving and low switching losses, with a rated isolation voltage of 2500 V~ for 1 minute. The operating and storage junction temperature range is from -40°C to 175°C, and it complies with RoHS standards. Thermal resistance from junction to case is 1.0 K/W, and the device meets UL 94V-0 flammability requirements.
Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use in high speed industrial switch mode power supplies and for pulsed power.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN27N120SK |
| Product Name | Enhancement Mode |
| MOSFET Operating Mode | Enhancement |
