Littelfuse, Inc. Enhancement Mode LSIC1MO120E0080

Description
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance
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Description
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Enhancement Mode - LSIC1MO120E0080 - Littelfuse, Inc.
Rosemont, IL, United States
Enhancement Mode
LSIC1MO120E0080
Enhancement Mode LSIC1MO120E0080
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance

Supplier's Site Datasheet
Single FETs, MOSFETs - LSIC1MO120E0080 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
LSIC1MO120E0080
Single FETs, MOSFETs LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3

SICFET N-CH 1200V 39A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - F10335-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
F10335-ND
Single FETs, MOSFETs F10335-ND
N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO-247AD

N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO-247AD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278258-LSIC1MO120E0080 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278258-LSIC1MO120E0080
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278258-LSIC1MO120E0080
Win Source Part Number: 1278258-LSIC1MO120E0 080 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 10mA Power Dissipation (Max): 179W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V Vgs (Max): +22V, -6V Temperature Range - Operating: -55°C ~ 150°C ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Littelfuse Inc. Other Names: -LSIC1MO120E0080,F10 335 Drive Voltage (Max Rds On, Min Rds On): 20V

Win Source Part Number: 1278258-LSIC1MO120E0080
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 179W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V
Vgs (Max): +22V, -6V
Temperature Range - Operating: -55°C ~ 150°C
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Littelfuse Inc.
Other Names: -LSIC1MO120E0080,F10335
Drive Voltage (Max Rds On, Min Rds On): 20V

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Sheung Wan, Hong Kong
MOSFET 1200V 80mOhm SiC MOSFET

MOSFET 1200V 80mOhm SiC MOSFET

Buy Now Datasheet
MOSFET SIC 1200V 39A TO247-3 - 461-LSIC1MO120E0080 - Utmel Electronic Limited
Hong Kong, China
MOSFET SIC 1200V 39A TO247-3
461-LSIC1MO120E0080
MOSFET SIC 1200V 39A TO247-3 461-LSIC1MO120E0080
MOSFET SIC 1200V 39A TO247-3

MOSFET SIC 1200V 39A TO247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 39A, 150Deg C, 179W Rohs Compliant Littelfuse - 54AH3104 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 39A, 150Deg C, 179W Rohs Compliant Littelfuse
54AH3104
Mosfet, N-Ch, 1.2Kv, 39A, 150Deg C, 179W Rohs Compliant Littelfuse 54AH3104
MOSFET, N-CH, 1.2KV, 39A, 150DEG C, 179W ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 39A, 150DEG C, 179W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LSIC1MO120E0080 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LSIC1MO120E0080
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3

SICFET N-CH 1200V 39A TO247-3

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number LSIC1MO120E0080 LSIC1MO120E0080 F10335-ND 1278258-LSIC1MO120E0080 LSIC1MO120E0080 461-LSIC1MO120E0080 54AH3104 LSIC1MO120E0080
Product Name Enhancement Mode Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET MOSFET SIC 1200V 39A TO247-3 Mosfet, N-Ch, 1.2Kv, 39A, 150Deg C, 179W Rohs Compliant Littelfuse Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts 1200 volts
IDSS 39000 milliamps 39000 milliamps
TJ 175 C (347 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Polarity N-Channel; N-Channel N-Channel N-Channel
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