Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH110N10P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH110N10P is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a fast intrinsic diode and avalanche rating. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 5.20 to 5.72 mm in terminal spacing. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 110 A at 25°C, and a pulsed drain current of 250 A. Its on-state resistance is 15 mΩ at 10 V gate voltage and 55 A drain current, with a maximum junction temperature of 175°C. The reverse recovery time of the body diode is 150 ns. Mounting torque for the TO-247 package is 1.13 N·m (10 lb·in.).

Datasheet Summary
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The IXFH110N10P is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a fast intrinsic diode and avalanche rating. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 5.20 to 5.72 mm in terminal spacing. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 110 A at 25°C, and a pulsed drain current of 250 A. Its on-state resistance is 15 mΩ at 10 V gate voltage and 55 A drain current, with a maximum junction temperature of 175°C. The reverse recovery time of the body diode is 150 ns. Mounting torque for the TO-247 package is 1.13 N·m (10 lb·in.).

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH110N10P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH110N10P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH110N10P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
MOSFETs - 193492 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
193492
MOSFETs 193492
MOSFET N-Channel 100V 110A TO247

MOSFET N-Channel 100V 110A TO247

Supplier's Site
MOSFETs - 193492P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
193492P
MOSFETs 193492P
MOSFET N-Channel 100V 110A TO247

MOSFET N-Channel 100V 110A TO247

Supplier's Site
MOSFETs - 1684469 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684469
MOSFETs 1684469
MOSFET N-Channel 100V 110A TO247

MOSFET N-Channel 100V 110A TO247

Supplier's Site
Mosfet, N, To-247; Channel Type Ixys Semiconductor - 58M7587 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Ixys Semiconductor
58M7587
Mosfet, N, To-247; Channel Type Ixys Semiconductor 58M7587
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:480W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:480W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH110N10P 193492 193492P 58M7587
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFETs MOSFETs Mosfet, N, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
Package Type TO-247; TO-247 TO-247; To-247 TO-247; TO-247 TO-3; TO-247
MOSFET Operating Mode Enhancement
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