Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK520N075T2

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

MOSFET, N-CH, 75V, 520A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:520A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, 520A, 75V, 1.25KW, TO-264-3 ROHS COMPLIANT: YES