Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK520N075T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Datasheet
Datasheet Summary
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The IXFK520N075T2 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as DC-DC converters and primary-side switching. It is packaged in a TO-264 case with a drain-source voltage rating of 75 V and a continuous drain current of 520 A at 25°C. The device features a maximum on-resistance of 2.2 mΩ, an avalanche energy rating of 3 J, and an integrated fast intrinsic diode. Thermal resistance from junction to case is 0.12 °C/W. The part is avalanche rated, meets RoHS standards, and is qualified to AEC-Q200. Maximum junction temperature is 175 °C, with a soldering lead temperature limit of 260 °C for 10 seconds. Weight is 10 g.

Datasheet Summary
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The IXFK520N075T2 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as DC-DC converters and primary-side switching. It is packaged in a TO-264 case with a drain-source voltage rating of 75 V and a continuous drain current of 520 A at 25°C. The device features a maximum on-resistance of 2.2 mΩ, an avalanche energy rating of 3 J, and an integrated fast intrinsic diode. Thermal resistance from junction to case is 0.12 °C/W. The part is avalanche rated, meets RoHS standards, and is qualified to AEC-Q200. Maximum junction temperature is 175 °C, with a soldering lead temperature limit of 260 °C for 10 seconds. Weight is 10 g.

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFK520N075T2 - Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFK520N075T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK520N075T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
Mosfet, N-Ch, 75V, 520A, 1.25Kw; Channel Type Littelfuse - 03AH0684 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 75V, 520A, 1.25Kw; Channel Type Littelfuse
03AH0684
Mosfet, N-Ch, 75V, 520A, 1.25Kw; Channel Type Littelfuse 03AH0684
MOSFET, N-CH, 75V, 520A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:520A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 75V, 520A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:520A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, 520A, 75V, 1.25Kw, To-264-3 Rohs Compliant Littelfuse - 29AK0430 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 520A, 75V, 1.25Kw, To-264-3 Rohs Compliant Littelfuse
29AK0430
Mosfet, 520A, 75V, 1.25Kw, To-264-3 Rohs Compliant Littelfuse 29AK0430
MOSFET, 520A, 75V, 1.25KW, TO-264-3 ROHS COMPLIANT: YES

MOSFET, 520A, 75V, 1.25KW, TO-264-3 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK520N075T2 03AH0684 29AK0430
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 75V, 520A, 1.25Kw; Channel Type Littelfuse Mosfet, 520A, 75V, 1.25Kw, To-264-3 Rohs Compliant Littelfuse
Polarity N-Channel
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