The IXFN120N65X2 is an N-channel enhancement mode power MOSFET in a miniBLOC (SOT-227) package, rated for 650 V drain-source voltage and 108 A continuous drain current at 25°C. It features a low on-resistance of 24 mΩ at 10 V gate voltage and 60 A drain current, an avalanche energy rating of 3.5 J, and a fast intrinsic diode with a forward voltage of 1.4 V. Peak pulsed current is 240 A, and the device supports a maximum dv/dt of 50 V/ns. It is rated for junction temperatures from -55°C to 150°C, with isolation voltage ratings of 2500 V~ RMS and 3000 V~ DC. Mounting torque is 1.5 Nm, and terminal torque is 1.3 Nm. The part is designed for switch-mode and motor drive applications.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXFN120N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN120N65X2 can be used for catalog matching and distributor lookup.
MOSFET, MODULE, N-CH, 650V, 108A; Channel Type:N Channel; Continuous Drain Current Id:108A; Drain Source Voltage Vds:650V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:890W RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN120N65X2 | 278-IXFN120N65X2 | 03AH0714 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFET Transistor | Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse |
| Polarity | N-Channel |
