Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFN120N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
  • 24 V Bidirectional 250 W Discrete TVS Diode - IXFN120N65X2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse - 03AH0714 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFN120N65X2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFN120N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFN120N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-IXFN120N65X2
MOSFET Transistor 278-IXFN120N65X2
Power Field-Effect Transistor, Product overview: IXFN120N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN120N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFN120N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN120N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse - 03AH0714 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse
03AH0714
Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse 03AH0714
MOSFET, MODULE, N-CH, 650V, 108A; Channel Type:N Channel; Continuous Drain Current Id:108A; Drain Source Voltage Vds:650V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:890W RoHS Compliant: Yes

MOSFET, MODULE, N-CH, 650V, 108A; Channel Type:N Channel; Continuous Drain Current Id:108A; Drain Source Voltage Vds:650V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:890W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN120N65X2 278-IXFN120N65X2 03AH0714
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor Mosfet, Module, N-Ch, 650V, 108A; Channel Type Littelfuse
Polarity N-Channel
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